We develop a coupled Dislocation Dynamics and Cluster Dynamics model of irradiation creep and growth. The model couples spatially dependent reaction-diffusion boundary value problems (BVP) for mobile vacancy and SIA clusters to the evolution of the discrete dislocation network within the crystal, including climb and glide motion of dislocations. Glide mobility laws are implemented through a neural network which was trained by Molecular Dynamics simulations, while climb motion is determined by the flux of mobile defects into the dislocation core. The framework is implemented in three-dimensional discrete dislocation dynamics (DDD) simulations within a superposition solution scheme, and it considers the effects of various bias factors including the diffusion anisotropy difference (DAD) of SIA clusters, the dislocation bias, and the production bias of defects from the radiation cascade. The framework is applied to model the high-temperature deformation of irradiated materials, with emphasis on irradiation creep and growth in both fission and fusion conditions. In irradiation growth conditions in Zr, we find that the DAD is the most critical factor influencing the kinetics of the loop evolution, while the recombination/interaction of mobile defects induces a strongly spatial dependence of the loop evolution. The method is also adopted to study the evolution of interstitial ⟨a⟩ and vacancy ⟨c⟩ dislocation loop ensembles in Zr. Our findings reveal the spatial dependence of the growth, and it determines a specific range for the anisotropy factor of SIA clusters to reproduce the co-growth of ⟨a⟩ and ⟨c⟩ loops.